SiC Schottky Diodes
Silicon Carbide Schottky Barrier Diodes
SiC Schottky diodes with zero reverse recovery, negligible recovery charge and far lower switching loss than Si fast recovery diodes, suited to high-voltage high-frequency rectification and freewheeling alongside SiC MOSFETs.
Key Specifications
| Parameter | 2200V / 40A | 2000V / 40A |
|---|---|---|
| Device Type | SiC Schottky diode | SiC MPS diode (merged PiN Schottky) |
| Repetitive Peak Reverse Voltage V_RRM | 2200V | 2000V |
| Average Forward Current I_F | 40A | 40A (T_C = 145°C) |
| Forward Voltage V_F (40A) | 1.50V (25°C) / 2.60V (175°C) | 1.36V (25°C) / 2.10V (175°C) |
| Reverse Recovery | Zero reverse recovery | Zero reverse recovery (Q_C 403 nC) |
| Surge Current I_FSM | 600A (10 ms sine) | 520A (10 ms half-sine) |
| Operating Junction Temp. | -55–+175°C | -55–+175°C |
| Wafer Size | 150 mm (6 inch) | 150 mm (6 inch) |
| Delivery Form | Unsawn wafer | Bare die / sawn wafer on film |
| Metallization | Front AlCu 3.5μm / back Ti/Ni/Ag | Front Al 4μm / back Ag 1.2μm (solder & sinter) |
| RoHS | Compliant | Compliant |
Processing Services
- Chemical coating
- Precision laser dicing
- Full-parameter electrical testing
Typical Applications
High-Frequency PFC (OBC, Storage PCS)PV Boost InvertersMedium-Voltage Supplies (HVDC, SST)Industrial High-Frequency RectifiersEV Fast Charging