SiC Schottky Diode Wafers
Silicon Carbide Schottky Barrier Diodes
SiC Schottky diodes feature near-zero reverse recovery time, with switching losses far lower than Si FRDs, making them ideal for high-frequency power conversion systems when used with SiC MOSFETs.
Product Specifications
| Parameter | JHEC0220A0040I04B | JHSC0200C0063B05B | JHSC0220D0100B05B | JHSC0330F0041B12C |
|---|---|---|---|---|
| Product Type | SiC Schottky | SiC | SiC | SiC |
| Voltage Rating | 2200V | 2000V | 2200V | 3300V |
| Current Rating | 40A | 63A | 100A | 41A |
| Wafer Size | 4 inch | 5 inch | 5 inch | 12 inch |
| Recovery Time | ≈ 0 (zero recovery) | ≈ 0 (zero recovery) | ≈ 0 (zero recovery) | ≈ 0 (zero recovery) |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Processing Services
- Chemical Coating
- Precision Laser Dicing
- Full parameter testing
Typical Applications
PFC CircuitsMotor DrivesSolar InvertersMedical Equipment PSUEV Fast Charging