SiC MOSFET Wafers
Silicon Carbide MOSFETs (Planar Gate)
Planar-gate SiC MOSFETs covering the 2000V and 3300V classes, with very low on-resistance, low switching loss and short-circuit withstand capability for medium-voltage drives, grid storage and solid-state transformers.
Key Specifications
| Parameter | 2000V / 63A | 3300V / 40A |
|---|---|---|
| Device Type | SiC MOSFET (planar gate) | SiC MOSFET (planar gate) |
| Drain-Source Voltage V_DSS | 2000V | 3300V |
| Current Rating I_D | 63A (T_C = 100°C) | 40A |
| On-Resistance R_DS(on) | 20 mΩ typ. (18V, 40A, 25°C) | 28 mΩ typ. (18V, 40A, 25°C) |
| Switching Characteristics | Low reverse transfer capacitance of 13.8 pF | Low gate charge, low switching loss, short-circuit rated |
| Operating Junction Temp. | -55–+175°C | -40–+175°C |
| Wafer Size | 150 mm (6 inch) | 150 mm (6 inch) |
| Delivery Form | Unsawn wafer | Unsawn wafer |
| Metallization | Front AlCu 5μm / back Ti/Ni/Ag | Front Al/Ni/Ag / back Ni/Ag |
| RoHS | Compliant | Compliant |
Processing Services
- Chemical coating: Ti/Ni/Ag multilayer metallization
- Precision laser dicing
- SiC-specific backside thinning
- Full-parameter electrical testing
Typical Applications
Medium-Voltage Motor DrivesRail Auxiliary ConvertersGrid-Scale Energy Storage PCSSolid-State Transformers (SST)High-Voltage DC/DC Conversion