SiC MOSFET Wafers
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors
SiC MOSFETs feature wider bandgap, higher breakdown voltage, and lower on-resistance compared to traditional Si IGBTs, making them ideal for high-frequency, high-temperature, and high-efficiency applications.
Product Specifications
| Parameter | JHMC0120A0300B12B | JHMC0170A0300B12B |
|---|---|---|
| Product Type | SiC MOSFET | SiC MOSFET |
| Voltage Rating | 1200V | 1700V |
| Wafer Size | 12 inch | 12 inch |
| Material | Silicon Carbide (SiC) | Silicon Carbide (SiC) |
| Key Features | Low R_DS(on), High-freq switching | Low R_DS(on), High-freq switching |
| Max Temp. | Up to +200°C | Up to +200°C |
| Metallization | Al / Cu optional | Al / Cu optional |
| RoHS | Compliant | Compliant |
Processing Services
- Chemical Coating: Ti/Ni/Ag multilayer metallization
- Precision Laser Dicing
- SiC-specific backside thinning
- Full parameter electrical testing
Typical Applications
PV InvertersEV On-Board ChargersServer Power SuppliesIndustrial High-freq SwitchingAerospace Power