Power Semiconductor Wafers
IGBT · FRD · SiC MOSFET · SiC Schottky, voltage range 1200V–3300V
JiuHongKe supplies IGBTs, FRDs, SiC MOSFETs and SiC Schottky diodes covering 1200V–3300V, with one-stop processing services including chemical coating (Ti/Ni/Ag multilayer metallization) and precision dicing. All products are RoHS compliant.
IGBT Wafers
Insulated Gate Bipolar Transistor Wafers
Trench & Field Stop IGBT wafers covering the 1200V and 1700V classes, with low saturation voltage, soft turn-off and a positive temperature coefficient for straightforward paralleling.
FRD Fast Recovery Diodes
Fast Recovery Diode Chips (Local Lifetime Control)
Fast recovery diodes using local lifetime control, designed as anti-parallel freewheeling diodes for 1200V and 1700V IGBTs, with low forward voltage, controlled reverse recovery and strong high-temperature behaviour.
SiC MOSFET Wafers
Silicon Carbide MOSFETs (Planar Gate)
Planar-gate SiC MOSFETs covering the 2000V and 3300V classes, with very low on-resistance, low switching loss and short-circuit withstand capability for medium-voltage drives, grid storage and solid-state transformers.
SiC Schottky Diodes
Silicon Carbide Schottky Barrier Diodes
SiC Schottky diodes with zero reverse recovery, negligible recovery charge and far lower switching loss than Si fast recovery diodes, suited to high-voltage high-frequency rectification and freewheeling alongside SiC MOSFETs.