Power Semiconductor Wafers
IGBT · SiC MOSFET · SiC Schottky, voltage range 1200V–3300V
JiuHongKe distributes and supplies multiple power semiconductor wafer products, supporting one-stop processing services including chemical coating (Ti/Ni/Ag multilayer metallization) and precision dicing. All products are RoHS compliant.
IGBT Wafers
Insulated Gate Bipolar Transistor Wafers
High-quality IGBT wafers for industrial drives, renewable energy inverters, and electric vehicle applications. Featuring advanced chip design and manufacturing processes with low saturation voltage, fast switching, and high reliability.
SiC MOSFET Wafers
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors
SiC MOSFETs feature wider bandgap, higher breakdown voltage, and lower on-resistance compared to traditional Si IGBTs, making them ideal for high-frequency, high-temperature, and high-efficiency applications.
SiC Schottky Diode Wafers
Silicon Carbide Schottky Barrier Diodes
SiC Schottky diodes feature near-zero reverse recovery time, with switching losses far lower than Si FRDs, making them ideal for high-frequency power conversion systems when used with SiC MOSFETs.