IGBT Wafers

Insulated Gate Bipolar Transistor Wafers

Trench & Field Stop IGBT wafers covering the 1200V and 1700V classes, with low saturation voltage, soft turn-off and a positive temperature coefficient for straightforward paralleling.

Key Specifications

Parameter1200V / 300A1700V / 340A
Device TypeIGBT (Trench & Field Stop)IGBT (Trench & Field Stop)
Voltage Class1200V1700V
Current Rating I_C300A340A
V_CE(sat)1.28V typ. (300A, 15V, 25°C)1.4V typ. (300A) / 1.6V typ. (340A)
Short-circuit Capability8 μs10 μs (175°C)
Operating Junction Temp.-40–+175°C-40–+150°C
Wafer Size200 mm (8 inch)300 mm (12 inch)
Delivery FormUnsawn waferUnsawn wafer
MetallizationFront AlCu 5μm / back Ni-AgFront AlCu 5μm / back Ni-Ag
RoHSCompliantCompliant

Processing Services

  • Chemical coating: Ti/Ni/Ag multilayer metallization
  • Precision dicing: laser / diamond blade
  • Full-parameter electrical testing

Typical Applications

EV Main TractionIndustrial InvertersPV & Energy Storage ConvertersRail & Wind ConvertersEV Charging Stations

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